 |
|
|
|
Measurement of work functions and surface potentials
The
new PM
Control® made
by S.I.S. extends the
universal AFM-controller SCANControl® C
by the SSPM Mode.
This mode enables the local investigation of electronic properties of
conducting and insulating surfaces.
This non contact method characterizes work function, surface potential,
and charge distribution.
Using the PM
Control®
you
can do SSPM measurements – similar
to the well known Kelvin Probe
technique – with your AFM/SPM, i.e. the S.I.S. ULTRAObjective®.
Now you can measure topography and simultaneously analyze the
properties of electronic devices,
dopant concentration, conducting polymers or insulators with nanometer
resolution. |
|
|
|
|
<<< |
|
|
|
Studying
dopant concentration
 Dopant
concentration
in a semiconducting material
Top: Topography, bottom: SSPM channel, Image size is 15 µm by
3 µm.
The images
show the cross section of a doped semiconductive material
(GaN). The wafer was cleaved and the
measurement was done on the break edge of the wafer. The scanning
surface potential mode provides a clear contrast
of the P-GaN doped layer and the N-GaN |
The PM
Control®
is available as an upgrade for all
SURFACE IMAGING SYSTEMS' instruments including the SCANControl® C
(i.e. ULTRAObjective®,
NANOStation® II,
etc.).
|
|
|
|
|
|
|
|
