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Applications
  • Patterned/Un-patterned wafer inspection
  • Reticle inspection
  • Critical dimension (CD) metrology
  • Overlay metrology
  • Filter/TFT inspection
  • Solar panel inspection
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Providing AFM/SPM Resolution



Slightly misaligned Si wafer (111) <<< Slightly misaligned oxidized Si 111 wafer:
The ultra-high stability is demonstrated by clearly imaging the surface. The terraces with a step height of 0.3 nm are detected without filtering.
Image size is 5 µm x 5 µm,
Z-height is 2 nm
Defect on Si-wafer >>>
Image size is 12 µm x 12 µm,
Z-height is 600 nm
Defect in Si wafer
structured Si wafer <<< Topography of structured Si wafer.
Image size is 38 µm x 38 µm,
Z-height is 3000 nm
DIC image of TFT sample AFM measurement on TFT sample
Optical image of TFT display, DIC contrast AFM measurement on TFT display.
Image size is 200 µm x 150 µm
Z-height is 3000 nm

 

Specifications

Applications